1、The Toshiba Discrete IGBT Product Guide introduces the advantages of IGBT (Insulated Gate Bipolar Transistor) integrating MOSFET high input impedance and bipolar transistor high voltage drive. It has the characteristics of fast switching, low saturation voltage, and multiple packaging forms. The voltage covers 300V-1500V and the current covers 8A-200A. It is suitable for various fields such as general inverters, IGBT cookware, flashlights, plasma display screens, etc. At the same time, it presents the product technology evolution trend, detailed product lineup, packaging size, and overseas branch information, supporting spot and customized procurement.
2、 Definition, Structure, and Advantages of IGBT Core
Definition: IGBT (Insulated Gate Bipolar Transistor), which combines the high input impedance of MOSFET with the high-voltage driving advantages of bipolar transistor
Structure: Four layer (pnpn) planar structure, conductive modulation is achieved through pnp transistors to reduce saturation voltage
Core Features:
Fast switching capability, low carrier injection and recombination rate
The high current region still maintains a low collector emitter saturation voltage (VCE (sat))
Built in optimized diodes for specific applications
High input impedance supports voltage drive
Provide various packaging options such as TSON-8, SOP-8, TO-220 series, TO-3P series, etc
Comparative advantage: Compared to power MOSFETs, it has lower conduction loss in high voltage scenarios, solving the problem of MOSFET conduction resistance increasing sharply with the breakdown voltage

3、 Technical Parameters and Evolutionary Trends
Key parameter range:
Typical values of parameter type range
Breakdown voltage (VCES) 300V-1500V 600V, 900V, 1200V (mainstream)
Collector current (IC) DC 8A-50A, pulse 20A-200A 30A, 50A, 60A (commonly used)
Saturation voltage (VCE (sat)) 1.45V-2.3V 1.6V (6th generation product), 1.9V (5th generation product)
Switching frequency: Hard switch up to 20kHz, fast switch up to 50kHz-
Junction temperature (Tj) 150 ℃ -175 ℃ 175 ℃ (high-end product)
Technological Evolution Trends:
Core optimization direction: optimizing wafer design, reducing graphic size, improving carrier lifetime control technology
Generation characteristics: 3rd generation (high robustness) → 4th generation (trench gate structure) → 5th generation (optimized carrier injection) → 6/6.5 generation (RC structure/thinner wafer) → 7th generation (high current adaptation)
4、 Product lineup classification (by application scenario)
Universal inverter series
High robustness series (3rd generation): 600V/1200V, IC 10A-50A, TO-3P (N) package, VCE (sat) 2.1V
Quick switch series (4th generation): 600V, IC 30A-50A, switching time 0.05 μ s, TO-3P (N)/TO-3P (LH) package
Low frequency switch series: 600V, IC 30A-40A, compatible with some switch converters
Soft switch application series (suitable for IGBT cookware, microwave ovens, multifunctional printers)
Voltage resonant type: 900V-1050V, IC 15A-6A, 6.5-generation RC-IGBT integrated freewheeling diode
Current resonant type: 600V, IC 30A-60A, built-in FRD (fast recovery diode), VCE (sat) as low as 1.55V
High voltage type: 1500V, IC 40A, TO-3P (N) package, Tj=175 ℃
Flash application series (suitable for digital cameras, DSLR cameras)
Gate driving voltage: 2.5V-4.0V (compatible with camera 3.3V/5V power supply)
Key parameters: 400V, IC 130A-200A, TSON-8/SOP-8 package, built-in ESD protection Zener diode
Representative models: GT8G151 (7th generation, 150A), GT10G131 (5th generation, 200A)
Plasma Display Panel (PDP) Application Series
Voltage level: 300V, 330V, 430V, 600V
Current specification: 200A (3 μ s pulse), VCE (sat) 1.45V-2.5V
Packaging: TO-220SIS/TO-220SM (MXN), mainly for 6th generation products
5、 Packaging size and obsolete products
Mainstream packaging size (unit: mm):
Definition of key size pins for packaging types
TSON-8 3.1 × 3.3 × 0.65 1-3 pin emitter, 5-8 pin collector, 4-pin gate
TO-220SIS 15 × 10 × 2.7 1-pin gate, 2-pin collector, 3-pin emitter
TO-3P (N) 20.0 × 15.9 × 4.5 1-pin gate, 2-pin collector, 3-pin emitter
Eliminated products: including MG30T1AL1, GT40M101 and other models, some models provide alternative suggestions (such as GT60M322 being replaced with GT60N321)